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IR Photodiode 800nm, TO-18S2381
S2381 - IR Photodiode 800nm, TO-18, Hamamatsu
175-20-208
S2381
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- The avalanche photo diode is the most sensitive semiconductor-based light sensor
- The photo current is the same as that of a conventional photo diode, but it is amplified by an electrical field in one layer
- The excited electrons excite other electrons and therefore produce a so-called ''avalanche effect''
- The signal is amplified about 100 times
- Avalanche photo diodes react sensitively to voltage and temperature changes
Article Information
Previous Article Number
7520208
Paper catalogue
2016/17 p. 191
Additional information
Country of origin Japan (JP)
Manufacturer Hamamatsu
Gross weight (incl. package) 1 Gram
Dimensions (incl. package) 17 x 7 x 5 MM
Customs number 8541420000
UNSPSC (v5.03) 32111506